Caratterizzazione dei sensori al silicio 3D FBK-irst DOUBLE SIDE DOUBLE TYPE COLUMN

3D pixel silicon detectors are being investigated because of their promising properties for experimental physics experiments and other applications. Their main advantages with respect to traditional silicon detectors are the high radiation hardness and the possibility of having active edges, reducing the dead zones in the sensor. After an introduction into this field of research, this thesis focuses on the characterization of 3D Double Side Double Type Column pixel silicon detectors developed at the Fondazione Bruno Kessler (FBK-irst) in Trento, Italy, with laboratory characterization, test beam and irradiation of these detectors at CERN.