Primi Risultati su Sensori a 65nm a Risposta Rapida

Since the early 1980s, experimental physics began using semiconductor based detectors to detect charged particles. Silicon based technologies for particle detection have been in development since then and are to this day some of the best tracking devices available. As time goes by, higher and higher accuracy, both timing and spacial, is required to new generation sensors, and so new silicon technologies are constantly being developed to achieve ever better results and leaps in efficiency.\\ One such leap is under the works for the Inner Tracking System (ITS) of ALICE ("A Large Ion Collider Experiment") at CERN in view of its 2026 Run 4 upgrade, passing from the, now under use, ALPIDE (ALice PIxel Detector) chips with a 180 nm technology, to a new iteration of CMOS monolithic pixel sensors in a 65 nm technology produced by TowerJazz Panasonic Semiconductor Company (TPSCo).\\ The full development process, of which we will cover a small part, will take multiple stages over the years until Run 4 and will include different test structures for the study of different aspects of the new implementations of these chips. In particular, in this thesis we will report preliminary results on the study of the behaviour of one of these test structures. In these early stages of development, we aimed at testing its functionality and performance, and developing a qualification method useful for future iteration of the same family of sensors.