Risoluzione temporale di un prototipo di sensore a pixel monolitico in tecnologia SiGe BiCMOS

The development of silicon detectors for charge particle tracking is in constant evolution. One of the major improvements taken understudy recently, in the field of collider experiments of high-energy physics, is the introduction of the timing information in the tracking system currently in use.This concept can be better understood, for example, considering the High Luminosity LHC upgrade that will take place during 2024-2026, which consists in increasing the instantaneous luminosity of the collider, from 5·1034cm−2s−1 to 7.5·1034cm−2s−1. Indeed, to overcome the overlapping of events caused by the increased luminosity,it is crucial to exploit the timing information using a 4D-Tracking system (3 spatial dimensions combined with timing information). Different technologies contribute to the current 4D sensors scenario. This thesis in particular focuses on the study of a monolithic pixelated silicon detector able to reach time resolution values below 100ps. The goal is to test a monolithic silicon pixel prototype realized in the SG13G2 130nm BiCMOS technology from IHP Microelectronics: a technology that combines Bipolar and CMOS transistors in a single integrated chip.In particular, the measurements presented here aim to estimate the sensor time resolution that can be reached and control the main factors that may degrade the timing performance as well as the correlation between the time resolution and the amplifier power consumption.