Formazione di centri di colore GeV in diamante

Quantum physics is the study of matter and energy at the most fundamental levels, encompassing various aspects such as quantum theory, quantum mechanics, quantum field theory, and quantum information theory (QIT). Quantum mechanics specifically deals with the mathematical description of particle behavior at the quantum level, providing insights into phenomena like wave-particle duality, superposition, and entanglement observed at atomic and subatomic scales. Quantum technology utilizes principles from quantum physics to innovate capabilities in computing, communication, and sensing. Representing a cutting-edge field, it leverages quantum mechanics to develop technologies with significant implications for various industries, particularly in quantum information technologies. Therefore, precise quantity and polarization of photons is essential, leading researchers to exploit single photon sources (SPSs) to produce such single photon states. This thesis aims to enhance and refine the properties of a specific defect found within the diamond crystal structure. Recent studies have shown promising results in group Ⅳ defect in diamond, particularly Germanium-Vacancy (GeV) center, including narrow photoluminescence spectra dominated by the zero phonon line (ZPL), high quantum efficiency, low environmental sensitivity, and optically addressable spins, motivating further exploration and optimization. Notably, this defect exhibits a low activation efficiency, prompting efforts to improve conversion efficiency and achieve scalability and uniformity in sample production. In summary, this study showcases the successful implementation of a maskless implantation technique to create arrays of single GeV centers within diamond. We achieved precise spatial control at the scale of tens of nanometers by utilizing direct FIB technology, leading to these results: 1.Doubling the activation efficiency of GeV centers by electron irradiation without increasing the number of ion implantations and voltage acceleration 2.The emergence of an unknown NIR peak at 781 nm in the electron irradiation area, likely resulting from the formation of vacancy clusters through electron irradiation. 3.Achieving an activation efficiency of 1.06% up to dose 850 ions/spot with an error of about 0.11%. Furthermore, the creation ratio reaches to 49% at dose 170 ions/spot. 4.NV centers are activated in diamond from inherent nitrogen by electron irradiation with doses of 500 and 1000 mC/cm2 and a kinetic energy of 10 KeV before annealing. 5.Examination of the diamond Raman band revealed that the diamond structure remained unchanged and undamaged. Therefore, environmental factors don't affect the optical properties of GeV color centers.